Sonia Ghosh
12Patents
3h-index
13Co-inventors
53Inventor score
Filing activity: Jul 30, 2010 → Sep 30, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9685210B1 | Overlapping precharge and data write | Physics | 26 | Active |
| US10916275B1 | Write driver and pre-charge circuitry for high performance pseudo-dual port (PDP) memories | Physics | 8 | Active |
| US9858988B1 | Timing circuit for memories | Physics | 6 | Active |
| US11092646B1 | Determining a voltage and/or frequency for a performance mode | Physics | 1 | Active |
| US9263349B2 | Printing minimum width semiconductor features at non-minimum pitch and resulting device | Emerging Cross-Sectional Technologies | 0 | Active |
| US11222846B1 | Static random access memory (SRAM) bit cells employing asymmetric width read and write word lines, and related methods | General | 0 | Revoked |
| US8238187B2 | Fast cyclic decoder circuit for FIFO/LIFO data buffer | Physics | 0 | Active |
| US9564375B2 | Structures and methods for extraction of device channel width | Physics | 0 | Active |
| US9905316B2 | Efficient sense amplifier shifting for memory redundancy | Physics | 0 | Active |
| US9484300B2 | Device resulting from printing minimum width semiconductor features at non-minimum pitch | Emerging Cross-Sectional Technologies | 0 | Active |
| US11251123B1 | Static random access memory (SRAM) bit cells employing asymmetric width read and write word lines, and related methods | Electricity | 0 | Active |
| US11289495B1 | Static random access memory (SRAM) bit cell circuits with a minimum distance between a storage circuit active region and a read port circuit active region to reduce area and SRAM bit cell array circuits | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.