Metal gate structure
US9263540B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2015 |
| Grant date | Feb 16, 2016 |
| Priority date | — |
| Expiry date | Sep 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The metal gate structure includes at least a substrate, a dielectric layer, first and second trenches, first metal layer and second metal layers, and two cap layers. In particular, the dielectric layer is disposed on the substrate, and the first and second trenches are disposed in the dielectric layer. The width of the first trench is less than the width of the second trench. The first and second metal layers are respectively disposed in the first trench and the second trench, and the height of the first metal layer is less than or equal to the height of the second metal layer. The cap layers are respectively disposed in a top surface of the first metal layer and a top surface of the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.