Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof
US9269580B2 · kind B2 · utility
0Cited by
9References
72Claims
0Family size
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Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Feb 23, 2016 |
| Priority date | — |
| Expiry date | Apr 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.