Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etch

US9269893B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Yu Lu · San Diego, US
• Chando Park · San Diego, US
• Wei-Chuan Chen · Taipei, TW

Key dates

• Filing date: Apr 2, 2014
• Grant date: Feb 23, 2016
• Expiry date: Apr 2, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/80

Abstract

A multi-step etch technique for fabricating a magnetic tunnel junction (MTJ) apparatus includes forming a first conductive hard mask on a first electrode of the MTJ apparatus for etching the first electrode during a first etching step. The method also includes forming a second conductive hard mask on the first conductive hard mask for etching magnetic layers of the MTJ apparatus during a second etching step. A spacer layer is conformally deposited on sidewalls of the first conductive hard mask. The second conductive hard mask is deposited on the first conductive hard mask and aligned with the spacer layer on the sidewalls of the first conductive hard mask.