Uniform roughness on backside of a wafer

US9275868B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Shawn A. Adderly · South Burlington, US
• Jeffrey P. Gambino · Gresham, US
• Max L. Lifson · Burlington, US
• Matthew D. Moon · Jeffersonville, US
• William J. Murphy · North Ferrisburgh, US
• Timothy D. Sullivan · Batavia, US
• David C. Thomas · Oklahoma City, US

Key dates

• Filing date: Jul 19, 2013
• Grant date: Mar 1, 2016
• Expiry date: Dec 5, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3083
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Substrates (wafers) with uniform backside roughness and methods of manufacture are disclosed. The method includes forming a material on a backside of a wafer. The method further includes patterning the material to expose portions of the backside of the wafer. The method further includes roughening the backside of the wafer through the patterned material to form a uniform roughness.