Patent · US Active

Substrate processing with rapid temperature gradient control

US9275887B2 · kind B2 · utility

17Cited by
83References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 14, 2007
Grant dateMar 1, 2016
Priority date
Expiry dateAug 16, 2030

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB05C13/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.