Self-rectified device, method for manufacturing the same, and applications of the same
US9276090B2 · kind B2 · utility
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23Claims
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Key dates
| Filing date | Jun 27, 2013 |
| Grant date | Mar 1, 2016 |
| Priority date | — |
| Expiry date | Nov 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A self-rectified device is provided, comprising a bottom electrode, a patterned dielectric layer with a contact hole formed on the bottom electrode, a memory formed at the bottom electrode and substantially aligned with the contact hole, and a top electrode formed on the bottom electrode and filling into the contact hole to contact with the memory, wherein the top electrode comprises a N+ type semiconductor material or a P+ type semiconductor material, and the memory and the top electrode produce a self-rectified property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.