Patent · US Active

Semiconductor device comprising contact trenches

US9281359B2 · kind B2 · utility

2Cited by

6References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Markus Zundel · Egmating, DE
Andreas Meiser · Unterhaching, DE
Hans-Peter Lang · Harburg, DE
Thorsten Meyer · Regensburg, DE
Peter Irsigler · Ried im Innkreis, AT

Key dates

Filing date	Aug 20, 2012
Grant date	Mar 8, 2016
Priority date	—
Expiry date	Aug 20, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/013
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

One embodiment of a semiconductor device includes a semiconductor body with a first side and a second side opposite to the first side. The semiconductor device further includes a first contact trench extending into the semiconductor body at the first side. The first contact trench includes a first conductive material electrically coupled to the semiconductor body adjoining the first contact trench. The semiconductor further includes a second contact trench extending into the semiconductor body at the second side. The second contact trench includes a second conductive material electrically coupled to the semiconductor body adjoining the second contact trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.