Method of writing to a spin torque magnetic random access memory
US9286963B2 · kind B2 · utility
1Cited by
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23Claims
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Key dates
| Filing date | Jun 24, 2014 |
| Grant date | Mar 15, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Circuitry and a method provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a pulse of opposite polarity associated with a write pulse. The pulse of opposite polarity may comprise equal or less width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.