Method for manufacturing a semiconductor on insulator structure having low electrical losses
US9293473B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Feb 3, 2015 |
| Grant date | Mar 22, 2016 |
| Priority date | — |
| Expiry date | Feb 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950° C. for at least 10 minutes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.