Flowable oxide film with tunable wet etch rate
US9299559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2014 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Aug 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.