Deep gate trench IGBT
US9299819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Mar 29, 2016 |
| Priority date | — |
| Expiry date | Mar 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
There are disclosed herein various implementations of an insulated-gate bipolar transistor (IGBT) with buried depletion electrode. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second conductivity type opposite the first conductivity type situated over the drift region. The IGBT also includes a plurality of deep insulated trenches with a buried depletion electrode and at least one gate electrode disposed therein. In addition, the IGBT includes an active cell including an emitter adjacent the gate electrode, and an implant zone, situated between adjacent deep insulated trenches. The implant zone is formed below the base layer and has the first conductivity type. In one implementation, the IGBT may also include a dummy cell neighboring the active cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.