Fabrication methods of conducting bridge random access memory (CBRAM) device structures

US9306161B1 · kind B1 · utility

Assignee

• Adesto Technologies Corporation · US

Inventors

• Yi Ma · Orlando, US
• Chakravarthy Gopalan · Santa Clara, US
• Antonio R. Gallo · Colorado Springs, US
• Janet Wang · Los Altos, US

Key dates

• Filing date: Mar 18, 2013
• Grant date: Apr 5, 2016
• Expiry date: Sep 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8822

Abstract

A method of forming a conductive bridging memory cell can include forming an active electrode layer above a barrier layer formed on a lower conductive layer; forming at least one ion conductor layer over an active electrode layer; incorporating conductive ions into the ion conductor layer to create a switch memory layer that changes impedance in response to an electric field; and the active electrode layer is a source of conductive ions for the ion conductor, and the barrier layer substantially prevents a movement of conductive ions therethrough.