CVD apparatus for improved film thickness non-uniformity and particle performance

US9312154B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Binh Tran · San Jose, US
• Anqing Cui · Palo Alto, US
• Bernard L. Hwang · Santa Clara, US
• Son T. Nguyen · San Jose, US
• Anh N. Nguyen · Milpitas, US
• Sean M. Seutter · Fremont, US
• Xianzhi Tao · Palo Alto, US

Key dates

• Filing date: Apr 20, 2010
• Grant date: Apr 12, 2016
• Expiry date: Dec 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68785
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.