Self-aligned contacts for vertical field effect transistors

US9312383B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Kangguo Cheng · Schenectady, US
• Wilfried E. Haensch · Somers, US
• Ali Khakifirooz · Los Altos, US
• Davood Shahrjerdi · Brooklyn, US

Key dates

• Filing date: Aug 12, 2015
• Grant date: Apr 12, 2016
• Expiry date: Aug 12, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor devices having vertical field effect transistors with self-aligned source and drain contacts are provided, as well as methods for fabricating vertical field effect transistors with self-aligned source and drain contacts.