Method and apparatus for protection against process-induced charging
US9318373B2 · kind B2 · utility
0Cited by
16References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 19, 2013 |
| Grant date | Apr 19, 2016 |
| Priority date | — |
| Expiry date | Apr 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (400) for improved charge dissipation protection includes a substrate (426), a layer of semiconductive or conductive material (406), one or more thin film devices (408) and a charge passage device (414). The thin film devices (408) are connected to the semiconductive or conductive layer (406) and the charge passage device (414) is coupled to the thin film devices (408) and to the substrate (426) and provides a connection from the thin film devices (408) to the substrate (426) to dissipate charge from the semiconductive/conductive layer (406) to the substrate (426).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.