Metrology pattern layout and method of use thereof
US9323882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2014 |
| Grant date | Apr 26, 2016 |
| Priority date | — |
| Expiry date | Aug 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/392
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A metrology pattern layout for a circuit structure is provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.