Achieving a critical dimension target based on resist characteristics
US9329471B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 2014 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Nov 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/34
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Achieving a critical dimension target for a feature based on characteristics of a resist is facilitated. Mask data is established for fabricating a lithographic mask to expose different regions of a resist to high, low, and intermediate exposure levels. The resist is configured to exhibit high solubility when exposed to the high or low exposure level, and low solubility when exposed to the intermediate exposure level. A critical dimension for a region of the resist to be exposed to the intermediate exposure level is determined, and the mask data is established to indicate opaque regions for forming on the lithographic mask. The opaque regions are arrayed to facilitate exposing the region of the resist to the intermediate exposure level, to achieve the determined critical dimension. Further, a method is provided for forming in-situ a patterned mask from a mask layer above a substrate material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.