Patent · US Active

Methods of forming patterns on substrates

US9330934B2 · kind B2 · utility

4Cited by

122References

47Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Baosuo Zhou · Loomis, US
Alex J. Schrinsky · Boise, US

Key dates

Filing date	May 18, 2009
Grant date	May 3, 2016
Priority date	—
Expiry date	May 18, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10B41/43
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods of forming a pattern on a substrate include forming carbon-comprising material over a base material, and spaced first features over the carbon-comprising material. Etching is conducted only partially into the carbon-comprising material and spaced second features are formed within the carbon-comprising material which comprise the partially etched carbon-comprising material. Spacers can be formed along sidewalls of the spaced second features. The carbon-comprising material can be etched through to the base material using the spacers as a mask. Spaced third features can be formed which comprise the anisotropically etched spacers and the carbon-comprising material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.