Semiconductor device with diffusion barrier film and method of manufacturing the same
US9330982B1 · kind B1 · utility
7Cited by
0References
20Claims
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Assignee
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Key dates
| Filing date | Aug 14, 2015 |
| Grant date | May 3, 2016 |
| Priority date | — |
| Expiry date | Aug 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a diffusion barrier film over fins and the resulting device are provided. Embodiments include forming silicon fins over a substrate; depositing a borosilicate glass (BSG) liner cap over a first set of the silicon fins; depositing a phosphosilicate (PSG) liner cap over a second set of the silicon fins; and depositing a silicon oxycarbide (SiOC) diffusion barrier film over the BSG and PSG liner caps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.