Precursors for silicon dioxide gap fill

US9337054B2 · kind B2 · utility

Assignee

• ENTEGRIS, INC. · US

Inventors

• William Hunks · Waterbury, US
• Chongying Xu · New Milford, US
• Bryan C. Hendrix · Danbury, US
• Jeffrey F. Roeder · Brookfield, US
• Steven M. Bilodeau · Oxford, US
• Weimin Li · Lo Wu, CN

Key dates

• Filing date: Jun 27, 2008
• Grant date: May 10, 2016
• Expiry date: Nov 21, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02282
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.