Methods for selectively removing a fin when forming FinFET devices
US9337101B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2015 |
| Grant date | May 10, 2016 |
| Priority date | — |
| Expiry date | Mar 31, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative method disclosed herein includes, among other things, forming a plurality of fins in a semiconducting substrate, each of which has a corresponding masking layer feature positioned thereabove, forming a masking layer that has an opening that exposes at least two fins of the plurality of fins, performing an angled etching process through the opening in the masking layer so as to remove the masking layer feature formed above one of the at least two exposed fins, and thereby define an exposed fin, while leaving the masking layer feature intact above the other of the at least two exposed fins, and performing an anisotropic etching process through the opening in the masking layer to remove the exposed fin while leaving the other of the at least two exposed fins intact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.