Semiconductor device

US9337270B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Frank Pfirsch · Birkenfeld, DE
• Dorothea Werber · Munich, DE

Key dates

• Filing date: Dec 19, 2013
• Grant date: May 10, 2016
• Expiry date: Feb 5, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D8/422

Abstract

A semiconductor device includes at least one field effect transistor structure, which is formed on a semiconductor substrate. The field effect transistor structure includes a drift region, a body region, a source region and a gate. The source region and the drift region include at least mainly a first conductivity type, wherein the body region includes at least mainly a second conductivity type. The body region includes at least one low doping dose portion extending from the drift region to at least one of the source region or an electrical contact interface of the body region at a main surface of the semiconductor substrate, wherein a doping dose within the low doping dose portion of the body region is less than 3 times a breakdown charge.