Method and apparatus for plasma dicing a semi-conductor wafer
US9343365B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2013 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Aug 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for plasma processing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing at least two cutting regions on the substrate, the cutting regions being positioned between all adjacent device structures on the substrate; generating a plasma using the plasma source; and processing the work piece using the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.