Low temperature in-situ doped silicon-based conductor material for memory cell

US9343668B2 · kind B2 · utility

Assignee

• CrossBar, Inc. · US

Inventors

• Steve Maxwell · Sunnyvale, US
• Sundar Narayanan · Santa Clara, US
• Sung Hyun Jo · Sunnyvale, US
• Tanmay Kumar · Pleasanton, US

Key dates

• Filing date: Mar 14, 2013
• Grant date: May 17, 2016
• Expiry date: Mar 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/884

Abstract

Providing for two-terminal memory cell structures and fabrication that can be achieved with a relatively low temperature process(es) is described herein. By way of example, disclosed two-terminal memory cells can be formed at least in part as a continuous deposition, potentially yielding improved efficiency in manufacturing. Furthermore, various embodiments can be compatible with some existing complementary metal oxide semiconductor fabrication processes, reducing or avoiding retooling overhead that might be associated with modifying existing fabrication processes in favor of other two-terminal memory cell fabrication techniques.