Memory cells having a self-aligning polarizer
US9344345B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 19, 2014 |
| Grant date | May 17, 2016 |
| Priority date | — |
| Expiry date | Aug 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldDigital communication
- WIPO sectorElectrical engineering
Abstract
Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.