Semiconductor structure with deep trench thermal conduction
US9349838B2 · kind B2 · utility
8Cited by
3References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2014 |
| Grant date | May 24, 2016 |
| Priority date | — |
| Expiry date | Oct 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Diodes and resistors for integrated circuits are provided. Deep trenches (DTs) are integrated into the diodes and resistors for the purposes of thermal conduction. The deep trenches facilitate conduction of heat from a semiconductor-on-insulator substrate to a bulk substrate. Semiconductor fins may be formed to align with the deep trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.