Patent · US Active

Methods for removing carbon containing films

US9355820B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Wei Liu · San Jose, US
Naomi Yoshida · Sunnyvale, US
Mandar B. Pandit · Wilsonville, US

Key dates

Filing date	Sep 12, 2014
Grant date	May 31, 2016
Priority date	—
Expiry date	Sep 12, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of methods for removing carbon-containing films are provided herein. In some embodiments, a method for removing a carbon-containing layer includes providing an ammonia containing process gas to a process chamber having a substrate with a silicon oxide layer disposed atop the substrate and a carbon-containing layer disposed atop the silicon oxide layer disposed in the process chamber; providing RF power to the process chamber to ignite the ammonia containing process gas to form a plasma; and exposing the substrate to NH and/or NH2 radicals and hydrogen radicals formed in the plasma to remove the carbon-containing layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.