Silicon nitride etching in a single wafer apparatus
US9355874B2 · kind B2 · utility
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3References
16Claims
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Key dates
| Filing date | Sep 24, 2011 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Sep 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.