Semiconductor device having a corrosion-resistant metallization and method for manufacturing thereof
US9355958B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2013 |
| Grant date | May 31, 2016 |
| Priority date | — |
| Expiry date | Jan 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate having a first side, a second side opposite the first side, an active area, an outer rim, and an edge termination area arranged between the outer rim and the active area. A metallization structure is arranged on the first side of the semiconductor substrate and comprising at least a first metal layer comprised of a first metallic material and a second metal layer comprised of a second metallic material, wherein the first metallic material is electrochemically more stable than the second metallic material. The first metal layer extends laterally further towards the outer rim than the second metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.