Methods for cyclically etching a metal layer for an interconnection structure for semiconductor applications
US9359679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2014 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Oct 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments of the present disclosure provide methods for etching a metal layer, such as a copper layer, to form an interconnection structure in semiconductor devices. In one example, a method of patterning a metal layer on a substrate includes supplying a first etching gas mixture comprising a hydro-carbon gas and a hydrogen containing gas into a processing chamber having a substrate disposed therein, the substrate having a metal layer disposed thereon, supplying a second gas mixture comprising the hydrogen containing gas to a surface of the etched metal layer disposed on the substrate, and supplying a third gas mixture comprising an inert gas into the processing chamber to sputter clean the surface of the etched metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.