Memory device with background built-in self-repair using background built-in self-testing
US9361196B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2014 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Jun 30, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0409
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device with a background built-in self-repair module (BBISRM) includes a main memory, an arbiter, and a redundant memory to repair a target memory under test (TMUT). The memory device also includes a background built-in self-test module (BBISTM) to identify portions of memory needing background built-in self-repair (BBISR). The BBISRM or the BBISTM can operate simultaneously while the memory device is operational for performing external accesses during field operation. The BBISR can detect and correct a single data bit error in the data stored in the TMUT. The arbiter configured to receive a read or write access memory request including a memory address, to determine if the memory address of the read or write access memory request matches the memory address mapped to the selected portion of the redundant memory, and to read or write data from the selected portion of the redundant memory, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.