Fast atomic layer etch process using an electron beam
US9362131B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2014 |
| Grant date | Jun 7, 2016 |
| Priority date | — |
| Expiry date | Oct 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32135
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etch process gas is provided to a main process chamber having an electron beam plasma source, and during periodic passivation operations a remote plasma source provides passivation species to the main process chamber while ion energy is limited below an etch ion energy threshold. During periodic etch operations, flow from the remote plasma source is halted and ion energy is set above the etch threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.