Integrated circuit having multiple threshold voltages

US9362180B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Bongki Lee · Malta, US
• Jin Ping Liu · Ballston Lake, US
• Manoj Joshi · Clifton Park, US
• Manfred Eller · Wappingers Falls, US
• Rohit Pal · Fishkill, US
• Richard J. Carter · Los Altos, US
• Srikanth B. Samavedam · Austin, US

Key dates

• Filing date: Feb 25, 2014
• Grant date: Jun 7, 2016
• Expiry date: Mar 11, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one aspect there is set forth herein an integrated circuit having a first plurality of field effect transistors and a second plurality of field effect transistor, wherein field effect transistors of the first plurality of field effect transistors each have a first gate stack and wherein field effect transistors of the second plurality of field effect transistors each have a second gate stack, the second gate stack being different from the first gate stack by having a metal layer common to the first gate stack and the second gate stack that includes a first thickness at the first gate stack and a second thickness at the second gate stack.