Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
US9365924B2 · kind B2 · utility
447Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 23, 2013 |
| Grant date | Jun 14, 2016 |
| Priority date | — |
| Expiry date | May 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.