Patent · US Active

Source down semiconductor devices and methods of formation thereof

US9368436B2 · kind B2 · utility

1Cited by

5References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Manfred Schneegans · Vaterstetten, DE
Andreas Meiser · Unterhaching, DE
Martin Mischitz · Wernberg, AT
Michael Roesner · Villach, AT
Michael Pinczolits · Villach, AT

Key dates

Filing date	Feb 4, 2015
Grant date	Jun 14, 2016
Priority date	—
Expiry date	Feb 4, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3511
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.