Hydroxyl group termination for nucleation of a dielectric metallic oxide
US9373501B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2013 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Apr 29, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/407
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.