Method and apparatus for forming gate stack on Si, SiGe or Ge channels
US9373516B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Aug 30, 2013 |
| Grant date | Jun 21, 2016 |
| Priority date | — |
| Expiry date | Jul 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium substrates surfaces are functionalized with one or more of sulfur and selenium by plasma processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.