Insulated gate bipolar transistor

US9373710B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Vera van Treek · Unterhaching, DE
• Frank Pfirsch · Birkenfeld, DE
• Roman Baburske · Otterfing, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE

Key dates

• Filing date: May 15, 2014
• Grant date: Jun 21, 2016
• Expiry date: May 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A semiconductor component is described herein. In accordance with one example of the invention, the semiconductor component includes a semiconductor body, which has a top surface and a bottom surface. A body region, which is doped with dopants of a second doping type, is arranged at the top surface of the semiconductor body. A drift region is arranged under the body region and doped with dopants of a first doping type, which is complementary to the second doping type. Thus a first pn-junction is formed at the transition between the body region and the drift region. A field stop region is arranged under the drift region and adjoins the drift region. The field stop region is doped with dopants of the same doping type as the drift region. However, the concentration of dopants in the field stop region is higher than the concentration of dopants in the drift region. At least one pair of semiconductor layers composed of a first and a second semiconductor layer are arranged in the drift region. The first semiconductor layer extends substantially parallel to the top surface of the semiconductor body and is doped with dopants of the first doping type but with a higher concentration of dopan…