Patent · US Active

Stress-inducing structures, methods, and materials

US9373717B2 · kind B2 · utility

0Cited by

10References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alois Gutmann · Poughkeepsie, US
Roland Hampp · Bad Abbach, DE
Scott Jansen · Boulder, US

Key dates

Filing date	Dec 9, 2014
Grant date	Jun 21, 2016
Priority date	—
Expiry date	Dec 9, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/81
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Stress-inducing structures, methods, and materials are disclosed. In one embodiment, an isolation region includes an insulating material in a lower portion of a trench formed in a workpiece and a stress-inducing material disposed in a top portion of the trench over the insulating material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.