Patent · US Active

Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growing

US9376764B2 · kind B2 · utility

0Cited by

2References

17Claims

0Family size

Assignee

SiCrystal GMBH · DE

Inventors

Thomas Straubinger · Steinfeld (Oldenburg), DE
Michael Vogel · Nuremberg, DE
Andreas Wohlfart · Erlangen, DE
Erwin Schmitt · Großenseebach, DE

Key dates

Filing date	Feb 15, 2013
Grant date	Jun 28, 2016
Priority date	—
Expiry date	Sep 15, 2034

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/36
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The present invention relates to a configuration and in particular a physical vapor transport growth system for simultaneously growing more than one silicon carbide (SiC) bulk crystal. Furthermore, the invention relates to a method for producing such a bulk SiC crystal. A physical vapor transport growth system for simultaneously growing more than one SiC single crystal boule comprises a crucible containing two growth compartments for arranging at least one SiC seed crystal in each of them, and a source material compartment for containing a SiC source material, wherein said source material compartment is arranged symmetrically between said growth compartments and is separated from each of the growth compartments by a gas permeable porous membrane.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.