Mask error compensation by optical modeling calibration
US9384318B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Apr 28, 2014 |
| Grant date | Jul 5, 2016 |
| Priority date | — |
| Expiry date | Nov 29, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methodologies and an apparatus for enabling OPC models to account for errors in the mask are disclosed. Embodiments include: determining a patterning layer of a circuit design; estimating a penetration ratio indicating a mask corner rounding error of a fabricated mask for forming the patterning layer in a fabricated circuit; and determining, by a processor, a compensation metric for optical proximity correction of the circuit design based on the penetration ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.