Patent · US Active

Write sequence providing write abort protection

US9384839B2 · kind B2 · utility

11Cited by
23References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 7, 2013
Grant dateJul 5, 2016
Priority date
Expiry dateDec 19, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/71
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

In a multi-level cell (MLC) nonvolatile memory array, data is assigned sequentially to the lower and upper page of a word line, then both lower and upper pages are programmed together before programming a subsequent word line. Word lines of multiple planes are programmed together using latches to hold data until all data is transferred. Tail-ends of data of write commands are stored separately.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.