FINFET structure

US9385191B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Yen-Liang Wu · Dashulong, TW
• Chung-Fu Chang · Tainan, TW
• Wen-Jiun Shen · Yuanchang, TW
• Man-Ling Lu · Luzhu District, TW
• Chia-Jong Liu · Chunri, TW
• Yi-Wei Chen · Taichung, TW

Key dates

• Filing date: Nov 20, 2014
• Grant date: Jul 5, 2016
• Expiry date: Nov 20, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/853

Abstract

A FINFET structure is provided. The FINFET structure includes a substrate, a PMOS element, a NMOS element, a STI structure, and a bump structure. The substrate includes a first area and a second area adjacent to the first area. The PMOS element is disposed in the first area of the substrate, and includes at least one first fin structure. The NMOS element is disposed in the second area of the substrate and includes at least one second fin structure. The STI structure is disposed between the first fin structure and the second fin structure. The bump structure is disposed on the STI structure and has a carbon-containing dielectric material.