Method for synthesizing ultrahigh-purity silicon carbide
US9388509B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2013 |
| Grant date | Jul 12, 2016 |
| Priority date | — |
| Expiry date | Apr 12, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of forming polycrystalline SiC grain material, low-density, gas-permeable and vapor-permeable bulk carbon is positioned at a first location inside of a graphite crucible and a mixture of elemental silicon and elemental carbon is positioned at a second location inside of the graphite crucible. Thereafter, the mixture and the bulk carbon are heated to a first temperature below the melting point of the elemental Si to remove adsorbed gas, moisture and/or volatiles from the mixture and the bulk carbon. Next, the mixture and the bulk carbon are heated to a second temperature that causes the elemental Si and the elemental C to react forming as-synthesized SiC inside of the crucible. The as-synthesized SiC and the bulk carbon are then heated in a way to cause the as-synthesized SiC to sublime and produce vapors that migrate into, condense on and react with the bulk carbon forming polycrystalline SiC material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.