Patent · US Active

Implantation apparatus with ion beam directing unit, semiconductor device and method of manufacturing

US9390883B2 · kind B2 · utility

0Cited by

0References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alexander Breymesser · Villach, AT
Stephan Voss · Munich, DE
Hans-Joachim Schulze · Taufkirchen, DE
Werner Schustereder · Villach, AT

Key dates

Filing date	Feb 11, 2014
Grant date	Jul 12, 2016
Priority date	—
Expiry date	May 10, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/62
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. A beam track of the ion beam on a substrate mounted on the substrate support includes circles or a spiral.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.