Integrated circuit and interconnect, and method of fabricating same

US9390969B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• David A. DeMuynck · Underhill, US
• Zhong-Xiang He · South Burlington, US
• Daniel R. Miga · Enosburg Falls, US
• Matthew D. Moon · Jeffersonville, US
• Daniel S. Vanslette · South Burlington, US
• Eric J. White · Vergennes, US

Key dates

• Filing date: Jan 20, 2015
• Grant date: Jul 12, 2016
• Expiry date: Jan 20, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes an interconnect within. The interconnect includes a hard mask on the sidewalls of the interconnect.