PVD buffer layers for LED fabrication
US9396933B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2013 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Sep 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.