Wet chemistry processes for fabricating a semiconductor device with increased channel mobility
US9396946B2 · kind B2 · utility
2Cited by
9References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Jul 19, 2016 |
| Priority date | — |
| Expiry date | Oct 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.