Liner for phase change memory (PCM) array and associated techniques and configurations

US9397143B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Noel Rocklein · Boise, US
• Qian Tao · Singapore, SG
• Zhe Song · Boise, US
• Vishwanath Bhat · Boise, US

Key dates

• Filing date: Dec 20, 2013
• Grant date: Jul 19, 2016
• Expiry date: Dec 20, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/882

Abstract

Embodiments of the present disclosure describe a liner for a phase change memory (PCM) array and associated techniques and configurations. In an embodiment, a substrate, an array of phase change memory (PCM) elements disposed on the substrate, wherein individual PCM elements of the array of PCM elements comprise a chalcogenide material and a liner disposed on sidewall surfaces of the individual PCM elements, wherein the liner comprises aluminum (Al), silicon (Si) and oxygen (O). Other embodiments may be described and/or claimed.